Graphene field effect transistors with high on/off current ratio and large transport band gap at room temperature

February 22, 2011
DOI: 10.4016/27305.01
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Article:
Peer-Reviewed Paper, View Original
Description:
Graphene is considered to be a promising candidate for future nanoelectronics due to its exceptional electronic properties. Unfortunately, the... » More
Citation:
Nano Lett., 2010, 10 (2), pp 715–718
Authors:
Fengnian Xia

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Copyright 2014 © Fengnian Xia. This pubcast is licensed under the terms of the Creative Commons Attribution License 3.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.