Insulator to metal transitions and resistive switching in the narrow gap Mott Insulator AM4Q8 (A=Ga, Ge; M=V, Nb, Ta; Q=S, Se) - Laurent Cario
EPICO 2012 - Electric Pulsed Induced Changes in Oxides (3556)
December 12, 2012 – December 14, 2012
Buenos Aires, Argentina

Voltage-Induced Metal-Insulator Transition in Vanadium Oxides: The role of Joule Heating - Gabriel Ramírez
EPICO 2012 - Electric Pulsed Induced Changes in Oxides (3556)
December 12, 2012 – December 14, 2012
Buenos Aires, Argentina

Crossover regime in manganite based resistive switching memory devices - Diego Rubi
EPICO 2012 - Electric Pulsed Induced Changes in Oxides (3556)
December 12, 2012 – December 14, 2012
Buenos Aires, Argentina

Resistive Switching Mechanism of Single-Crystalline Oxide-based Schottky Junctions - Dong-Wook Kim
EPICO 2012 - Electric Pulsed Induced Changes in Oxides (3556)
December 12, 2012 – December 14, 2012
Buenos Aires, Argentina

Phase control of bistable metal-insulator states in vanadium dioxide - Keisuke Shibuya
EPICO 2012 - Electric Pulsed Induced Changes in Oxides (3556)
December 12, 2012 – December 14, 2012
Buenos Aires, Argentina

Nanoscale analysis of redox-processes in resistive switching complex oxide devices - Regina Dittmann
EPICO 2012 - Electric Pulsed Induced Changes in Oxides (3556)
December 12 – December 14, 2012
Buenos Aires, Argentina